Ning
Li
10100
Burnet Rd. Bldg.160
Austin
TX 78758
(512)
779-8686 (cell)
ningli@mail.utexas.edu
OBJECTIVE
Seeking a full time job in
Photonics component/system
or Semiconductor device/circuit research and development
EDUCATION
The University of Texas at Austin, Austin, Texas
Ph. D. in ECE: Solid State Electronics, GPA:
4.0/4.0
December 2004 (Expected)
Tsinghua University, Beijing, China
M.S. in Electronics
Engineering
December 2000
B.
S. in
Electronics Engineering
July 1998
Course
Highlights: Optoelectronic
Devices, Semiconductor Laser, Guided-Wave Optics, Semiconductor
Heterostructure, Submicron Device Phys. and Tech., VLSI Fabrication
Technology, Semiconductor Physics, Stochastic Process, RF Circuits Design,
Digital/Analog CMOS IC Design, Digital Signal Processing, Mixed Signal/System
Modeling/Design
EXPERIENCE
Jan.
2001
Microelectronics
Research Center, The University of Texas at Austin
- Present
Research
Assistant in Prof. Joe C. Campbell’s Photonic Device group
§
High-power high-speed photodetectors for high power RF analog Photonic
links
-
Investigated the power limiting factors of broad bandwidth
photodetectors
-
Built up a broadband (DC~50GHz) high-power small-signal and
large-signal photodetector characterization system using Optical Heterodyne
-
Designed, fabricated, and characterized InGaAs/InP charge-compensated
uni-traveling-carrier photodetectors with record high power/bandwidth
product
-
Integrating the high power photodetectors onto Si wafers using
metal and direct wafer bonding
§
High-speed low leakage-current avalanche photodetectors (APDs)
for optical communication and imaging systems
-
Investigated thoroughly the carrier transport properties in APD
neutral, absorption, depletion and multiplication region
-
Designed, fabricated, and characterized a novel type of InGaAs/InAlAs
APD with undepleted absorption region
§
Balanced
Receivers for high dynamic range RF analog Photonic links and DPSK
communication systems
-
Investigated the dynamic range limiting factors of analog photonic links
-
Demonstrated a balanced photodetector structure with high-speed,
high-saturation-power, and excellent noise suppression
-
Demonstrated
planar short-multimode evanescently coupled balanced photodetectors with
fully depleted and partially depleted absorbers
§
Planar waveguide photodetectors for high responsivity and high
sensitivity applications
-
Investigated the waveguide design using Beam Propagation
Method (BPM)
-
Modified and simplified the Mask and Technology for waveguide
photodetectors
-
Designed, fabricated, and characterized an InGaAs/InGaAsP/InP
high-speed evanescently-coupled waveguide photodetector with very high
responsivity
§
System
test of device performance
-
Bit-Error-Rate
and Eye diagram characterization of PIN and APD receivers, and
Vecsel-Photodetector optical-interconnect systems
Sept. 1998
State
Key Lab. on Integrated Optoelectronics, Tsinghua University, Beijing, China
- Dec. 2000
Research
Assistant in Prof. Yi Luo’s Integrated Optoelectronics group
§
Semiconductor direct wafer bonding
-
Developed
key processing techniques and fixtures for InP to GaAs direct wafer bonding
-
Lowered the
bonding temperature and integrated a DFB MQW InGaAsP/InP laser on GaAs
substrate
SKILLS
-
Semiconductor Device Processing: Expert on III-V semiconductor processing,
Experienced on Si processing, Photolithography, Wet etching, Reactive ion
etching, Plasma enhanced CVD, Metal deposition, Interconnect through
air-bridge and polyimide, Wafer bonding
-
Semiconductor Device Characterization:
Frequency response, Impedance, RF calibration, Power compression, Noise and
excess noise, Quantum efficiency, Bit-Error-Rate, I-V, C-V, Heterodyne,
Network Analyzer, Spectrum Analyzer, Sampling Oscilloscope, RF Power meter
-
Device/Circuit Design: Semiconductor device design and simulation, Optical
waveguide design and simulation, Analog/Digital circuit design and analysis, Microwave transmission
line design
-
Design Tools and Software: L-Edit, BPM_PROP, SPICE, CADENCE, LABVIEW
-
Programming Languages: MATLAB, C, Fortran
REFERENCES
Available Upon Request
PUBLICATIONS
Journal
Papers
[1]
Ning Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A.
Tulchinsky, K. J. Williams, T.D. Isshiki, G.S. Kinsey, R. Sudharsansan,
“High-Saturation-Current Charge-Compensated InGaAs/InP Uni-Traveling-Carrier
Photodiode,” IEEE Photonics Technology Letters, Vol. 16 No.3, pp864-866, Mar.
2004
[2]
Ning Li,
R. Sidhu, X. Li, F. Ma, S. Demiguel, X. Zheng, A.
L. Holmes Jr., D. Tulchinsky, K. J. Williams, “Charge-compensated
high-saturation-current InGaAs/InAlAs uni-traveling-carrier photodiode,”
Submitted to Electronics Letters
[3]
Ning Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S.
Demiguel, A. L. Holmes, Jr., and J. C. Campbell, “InGaAs/InAlAs Avalanche
Photodiode with Undepleted Absorber,” Applied Physics Letters, Vol. 82 No.13,
pp2175-2177, Mar. 2003
[4]
Ning Li, H. Chen, S. Demiguel, X. Li, J. C. Campbell, T.D. Isshiki,
G.S. Kinsey, R. Sudharsansan, "High-Power Charge-Compensated Uni-Traveling-Carrier
Balanced Photodetector,” IEEE Photonics Technology Letters, Vol.16, No.10,
pp2329-2331, Oct. 2004
[5]
Ning Li, S. Demiguel, H. Chen, X. Zhang, J. C. Campbell, J. Wei,
H. Lu, A. Anselm "Planar Short-Multimode Waveguide Evanescently-Coupled
Balanced Photodetectors with Fully Depleted and Partially Depleted Absorber,”
Submitted
[6]
F. Ma, Ning Li, J. C. Campbell, “Monte
Carlo Simulations of the Bandwidth of InAlAs Avalanche Photodiodes,” IEEE Transactions
on Electron Devices, Vol. 50, Issue 11, pp2291 – 2294, Nov. 2003
[7]
S. Demiguel, Ning Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H.
Lu, and K. A. Anselm, “Very high-responsivity
evanescently-coupled photodiodes integrating a short planar multimode waveguide
for high-speed applications,” IEEE Photonics Technology Letters, Vol. 15, Dec.
2003
[8]
X. Li, Ning Li, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “A Comparison
of Front- and Backside-Illuminated High-Saturation Power Partially Depleted
Absorber Photodetecters,” IEEE Journal of Quantum Electronics, Vol.
40, pp1321 - 1325, Sept. 2004
[9]
X. Li, Ning Li, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “High-saturation-current
InP-InGaAs photodiode with partially depleted absorber,” IEEE
Photonics Technology Letters, Vol. 15 pp1276-1278, Sept. 2003
[10]
X. Li, Ning Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan,
C. Jadadish, “A Partially Depleted
Absorber Photodiode With Graded Doping Injection Regions,” IEEE Photonics Technology Letters, Vol. 16
pp2326-2328, Oct. 2004
[11]
S. Demiguel, X. Zheng, Ning Li, X. Li, J. C. Campbell, J. Decobert,
N. Tscherptner,A. Anselm, “High-responsivity
and high-speed evanescently-coupled waveguide avalanche photodiode,”
Electronics Letters, Vol 39,
pp1848-1849 Dec. 2003
[12]
X. Li, S. Demiguel, Ning Li, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “Backside
illuminated high saturation current partially depleted absorber photodetectors,”
Electronics Letters, Vol. 39 pp1466-1467, Oct. 2003
[13]
D. Tulchinsky, X. Li, Ning Li, S. Demiguel, J. C. Campbell, K. J.
Williams, “High saturation current, wide bandwidth photodetectors,” IEEE
Journal on Selected Topics in Quantum Electroncs, to be published
[14]
G. Karve, X. Zheng; X. Zhang; X. Li, Ning Li, S. Wang, F. Ma, A.
Holmes, Jr., J.C Campbell, G.S Kinsey, J.C. Boisvert, T.D Isshiki, R.
Sudharsanan, D.S. Bethune, W.P. Risk,
“Geiger mode operation of
an In0.53Ga0.47As-In0.52Al0.48As
avalanche photodiode,” IEEE Journal of Quantum Electronics, Vol.
39, pp1281-1286, Oct. 2003
[15]
S. Wang, R. Sidhu, G. Karve, F. Ma, X. Li, X. Zheng; J.B. Hurst, X. Sun, Ning
Li, A.L. Holmes, Jr., J.C. Campbell, “A study of low-bias photocurrent gradient of avalanche
photodiodes,” IEEE Transactions on Electron Devices, Vol49,
pp2107–2113, Dec. 2002
Conference
Presentations
[16]
Ning Li, X. Li, S. Demiguel, X. Zheng, J. C. Campbell, D. A.
Tulchinsky, K. J. Williams, T.D. Isshiki, G.S. Kinsey, R. Sudharsansan,
“High-Saturation-Current Charge-Compensated InGaAs/InP Uni-Traveling-Carrier
Photodiode, ”2003 IEEE/LEOS Annual Meeting Conf. Proc., Tucson, AZ,
pp790–791, Oct. 2003
[17]
Ning Li, H. Chen, S. Demiguel, X. Li, J. C. Campbell, T.D. Isshiki,
G.S. Kinsey, R. Sudharsansan, "High-Power InGaAs/InP Charge-Compensated Uni-Traveling-Carrier
Balanced Photodetector,” 2004 IEEE/LEOS Annual Meeting Conf. Proc., Puerto
Rico, Paper TuH1
[18]
Ning Li, S. Demiguel, H. Chen, X. Zhang, J. C. Campbell, J. Wei,
H. Lu, A. Anselm "Planar Short-Multimode Waveguide Evanescently-Coupled
Balanced Photodetectors with Fully Depleted and Partially Depleted Absorber,”
2005 Optical Fiber Communication Conference, Anaheim, CA
[19]
X. Li, Ning Li, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “High saturation current, wide bandwidth photodetectors,” 2004
IEEE International Topical Meeting on Microwave Photonics, Ogunquit, Maine
[20]
X. Li, Ning Li, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “High-saturation-current
InP-InGaAs photodiode with partially depleted absorber,” 2003
Optical Fiber Communication Conference, Atlanta, GA
[21]
X. Li, Ning Li, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “High-saturation-current
InP-InGaAs photodiode with partially depleted absorber,” 2002
IEEE/LEOS Annual Meeting Conf. Proc., Glasgow, Scotland
[22]
X. Li, Ning Li, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J.
Williams, “Space charge balance in high-speed high-saturation-current
photodetecters,” Proceedings of SPIE - The International Society for Optical
Engineering, v 5246, 2003, p 458-464
[23]
S. Demiguel, X. Zheng, Ning Li, X. Li, J. C. Campbell, J. Decobert,
N. Tscherptner,A. Anselm, “High-responsivity
and high-speed evanescently-coupled waveguide avalanche photodiode,” 2004
Optical Fiber Communication Conference, Los Angeles, CA
[24]
S. Demiguel, X. Li, Ning Li, H. Chen, J. C. Campbell, J. Wei, A.
Anselm, “High responsivity and high power partially depleted absorber
waveguide photodiodes with relaxed coupling efficiency,” 2005 Optical Fiber
Communication Conference, Anaheim, CA
[25]
S. Demiguel, X. Li, Ning Li, H. Chen, J. C. Campbell, J. Wei, A.
Anselm, “Partially depleted absorber waveguide photodiodes,” 2004 IEEE/LEOS
Annual Meeting Conf. Proc., Puerto Rico, Paper TuH2
[26]
J.C. Campbell, S. Wang, X. Zheng, X. Li, Ning Li, F. Ma, X. Sun,
J.B. Hurst, R. Sidhu, A.L. Holmes, Jr., A. Huntington, L.A. Coldren, “Recent
developments in avalanche photodiodes,” Optoelectronic and
Microelectronic Materials and Devices, 2002 Conference on, pp53–58, Dec. 2002