EE338L Homework 1

Due Thursday 2/1

Use the following parameters

NFET: Vt=0.5V, kp=100uA/V², l=0.05 1/V

PFET: Vt=-0.5V, kp=40uA/V², l=0.05 1/V

1) Determine the operating region and calculate the current ID.

a) PFET, VS=VB=3V, VD=1V, VG=2V

b) PFET, VS=VB=VG=3V, VD=1V

c) PFET, VS=VB=3V, VG=2V, VD=0V

d) NFET, VS=VB=0V, VG=3V, VD=0.5V

e) NFET, VS=VB=0V, VG=1V, VD=1V

2) Calculate the resistance of this n device: W=10um, L=1um

VG=3V, VS=0V, VDS is small, VB=0V

3) Design a 10kOhm resistor and calculate the parasitic capacitance

a) in polysilicon, min width .5um, Rsq=40 Ω/□, C_a=0.100fF/um², C_p=0.1fF/um

b) in p-diffusion, min width 1um, Rsq=100 Ω/□, C_a=0.400fF/um², C_p=0.4fF/um

c) using a p-device with Vgs=3V

Cad’=Cas’=0.4fF/ um²,

Cpd’=Cps’=0.4fF/um

Cox’=2.4fF/ um²,

Coverlap= 0.2fF/um

Cgb’=0.1fF/ um²,

Minimum gate width 0.5um, minimum gate length 0.5um, minimum drain and source dimension 1um