EE338L Lab 1:

Due 2/8/07

Background: A realistic mos model is very complex (>40 parameters) and thus not suitable for design equations etc.. Therefore the designer must derive a simple hand-calculation model with which to do initial calculations.

Use the given model file to simulate the id vs. vgs (vbs) and id vs. vds (vgs) characteristics of the n and p device cmosn and cmosp. Use the level 3 model. Then using curve fitting techniques to match the three parameters vto, kp and lambda of the hand-calculation model (which is identical to the level 1 model) to match it to the complex model. Briefly explain how you achieved your results.

Device sizing: W=20u, L=1u

Device biasing Vgs=Vt+150mV, Vds=200mV (saturation)

Turn in your level 1 parameters and 4 graphs comparing id vs. vgs (vbs) and id vs. vds (vgs) characteristics of level 3 to level 1 where all voltages range from 0 to 3 V (step the first by 10mV, the second by 500mV).